High quantum efficiency GaAs photocathodes activated with Cs, O2, and Te
نویسندگان
چکیده
منابع مشابه
OXIDE EFFECTS ON PHOTOEMISSION FROM HIGH CURRENT GaAs PHOTOCATHODES*
During four years of on line operation of the SLAC polarized electron gun (PEGGY) and polarized LEED (PLEED) system, we have observed and characterized the failure modes of the GaAs (100) photocathodes (PC’s) used in these systems. Several modes are observed. Gradual decreases in electron polarization and intensity are attributed to the physisorption of CO2 on the PC’s during running at LN2 tem...
متن کاملIn situ surface study of the activating layer on GaAs ( CS , 0 ) photocathodes
An in situ study of the activating layer on GaAs (CS , 0) photocathodes has been made using Auger electron spectroscopy, relative work function, photo-emission and spatial resolution measuring techniques. The layer thickness, composition and work function reduction have been measured for both singleand two-temperature activations. In order to account for the electron transmission probability an...
متن کاملModelling of High Quantum Efficiency Avalanche Photodiode
A model of a low noise high quantum efficiency n+np Germanium Photodiode utilizing ion implantation technique and subsequent drive-in diffusion in the n layer is presented. Numerical analysis is used to study the influence of junction depth and bulk concentration on the electric field profile and quantum efficiency. The performance of the device is theoretically treated especially at the wave-l...
متن کاملDesign of ARC less InGaP/GaAs DJ solar cell with high efficiency
In this work, we used the Atlas Tcad Silvaco software to investigate the effect of adding an additional BSF layer on the performance of InGap / GaAs dual junction solar cells with a hetero tunnel Al0.7Ga0.3As-In0.49Ga0.51P junction. These analyzes indicate that, the addition of a BSF layer to the bottom cell the increase in the thickness of the BSF top cell would reduce the recombination and in...
متن کاملA High Polarization and High Quantum Efficiency Photocathode Using a GaAs–AlGaAs Superlattice*
A charge of 2.3 × 1011 electrons in 2.5 ns at a laser wavelength of 757 nm with a corresponding quantum efficiency (QE) of 2.0% measured at 752 nm was extracted from a −120 kV biased, 20 mm diameter, GaAs–AlGaAs superlattice photocathode. The maximum electron polarization measured with material from the same wafer, but in a different system, was 71% at 757 nm for a QE of 1.0% measured at 752 nm...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: AIP Advances
سال: 2021
ISSN: 2158-3226
DOI: 10.1063/5.0026839